5 ″ Monocrystalline Silicon Wafer Specification Sheet

SAS Spec# PV-58                     Revision: A
Custorner P/N:                      Revised Date: 2005/4/28

No. Req Item Specification Unit Remarks
1          
1.1   Crystal Growth Method CZ    
1.2   Crystal Orientation <100> ± 3 degree ASTM F26–B7A
1.3   Conductivity Type P   ASTM F–42–93
1.4   Dopant Boron    
1.5   Resitivity 0.5 – 2 o-cm ASTM F–81–95
1.6   RRV N/A %  
1.7   EPD – max 2000 ea/cm 2 ASTM F47–94
1.8   Diffusion Length N/A μ m  
1.9   Lifetime – min 10 μ s  
1.10   Oxygen Concemtration <1.0 x E18 at/cm 3   ASTM F121–B3
1.11   Garbon Concerntration <5.0 x E16 at/cm 3   ASTM F–123–B1
2          
2.1   Type      
2.2   Dimension      
2.3   A 125 ± 0.5 mm  
2.4   B 150 ± 0.5 mm  
2.5   C 84 ± 3 mm  
2.6   D – mm  
2.7   Angle between square sides 90 ± 0.3 Degree  
3          
3.1   Thickness 280 +/– 30 μ m  
3.2   TTV – max 30 μ m  
3.3   Bow – max 50 μ m  
3.4   Warpage – max 50 μ m  
3.5   Taper N/A μ m  
3.6   Surface Finished As wire–cur %  
3.7   Surface Roughness, Ra / Rmax / μ m  
3.8   Saw Mark Depth – max 20 μ m  
3.9   Chip Length – max 5 mm  
3.10   Chip Depth – max 0.5 mm  
3.11   Appearance    None of fracture, cracks, foreign materials and stains
3.12   Packing    Shrink wrap per 100 wafers
note      
 
       
 

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